NITRIDE SEMICONDUCTOR COMPONENT LAYER STRUCTURE ON GROUP IV SUBSTRATE SURFACE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor component having a Group III nitride layer structure with improved crystallinity on a mixed crystal of a Group IV substrate surface.

SOLUTION: A nitride semiconductor component has a Group III nitride layer structure which is deposited epitaxially on a substrate having a Group IV substrate surface made of a cubical Group IV substrate material. The Group IV substrate surface is an änml} surface which has a unit cell with the C2 symmetry and no unit cell with any higher rotational symmetry than the C2 symmetry, where n and m are nonzero integers and l≥2.

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