| 发明名称 |
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase ON-state current by increasing carrier mobility (channel mobility). <P>SOLUTION: A semiconductor substrate (10) for forming a transistor comprises: a silicon substrate (11) including a main surface (11a); a strain-relaxed SiGe layer (12) formed on the main surface (11a) of the silicon substrate (11); and a strained Si layer (13) formed on the strain-relaxed SiGe layer (12). <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2012230993(A) |
申请公布日期 |
2012.11.22 |
| 申请号 |
JP20110097985 |
申请日期 |
2011.04.26 |
| 申请人 |
ELPIDA MEMORY INC |
发明人 |
HISAKANE KAZUKI |
| 分类号 |
H01L29/78;H01L21/336;H01L21/8242;H01L27/108 |
主分类号 |
H01L29/78 |
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