发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a first transistor, a second transistor, a first transistor group, and a second transistor group. The first transistor group includes a third transistor, a fourth transistor, and four terminals. The second transistor group includes fifth to eighth transistors and four terminals. The first transistor, the third transistor, the sixth transistor, and the eighth transistor are n-channel transistors, and the second transistor, the fourth transistor, the fifth transistor, and the seventh transistor are p-channel transistors.
申请公布号 US2012292713(A1) 申请公布日期 2012.11.22
申请号 US201213472542 申请日期 2012.05.16
申请人 OHNUKI TATSUYA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OHNUKI TATSUYA
分类号 H01L27/092;H01L27/088 主分类号 H01L27/092
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