| 摘要 |
A method of forming a semiconductor device includes forming an interlayer insulating layer over the semiconductor substrate of a cell region, and forming gate structures over the semiconductor substrate of a peripheral region. Reserved bit line regions are formed in the cell region by etching the interlayer insulating layer, and gates are formed by etching the gate structures in the peripheral region. A capping insulating layer and an isolation layer are formed over the reserved bit line regions and the gates, the isolation layer of the cell region is removed, and an etch-back process is performed on the capping insulating layer, and bit lines are formed in the respective reserved bit line regions. Semiconductor device yields can be enhanced because patterns having a fine critical dimension can be formed in peripheral regions with an increased degree of integration.
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