发明名称 PLASMA ATTENTUATION FOR UNIFORMITY CONTROL
摘要 A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment a conductive or ferrite material is used to influence a section of the antenna where a section is made up of portions of multiple coiled segment. In another embodiment, a ferrite material is used to influence a portion of the antenna, in another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.
申请公布号 WO2012158805(A2) 申请公布日期 2012.11.22
申请号 WO2012US38150 申请日期 2012.05.16
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;KURUNCZI, PETER, F.;SINCLAIR, FRANK;BILOIU, COSTEL;GODET, LUDOVIC;ALLEN, ERNEST 发明人 KURUNCZI, PETER, F.;SINCLAIR, FRANK;BILOIU, COSTEL;GODET, LUDOVIC;ALLEN, ERNEST
分类号 H01J37/30 主分类号 H01J37/30
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