| 摘要 |
<p>A semiconductor device outputs a signal for controlling the electric potential of the gate of an insulated-gate type switching element. The semiconductor device comprises a first signal output terminal, and can receive an input of a reference signal that changes between a first electric potential and a second electric potential that is higher than the first electric potential, or can generate the reference signal therein. The semiconductor device can switch between executing a first operation or a second operation, said first operation being an operation of outputting to the first signal output terminal a signal which becomes a third electric potential when the reference signal takes the first electric potential and which becomes a fourth electric potential that is higher than the third electric potential when the reference signal takes the second electric potential, and said second operation being an operation of outputting to the first signal output terminal a signal which becomes the fourth electric potential when the reference signal takes the first electric potential and which becomes the third electric potential when the reference signal takes the second electric potential.</p> |
