SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS
摘要
<p>Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures comprise an annular STT stack including a nonmagnetic material between a first ferromagnetic material and a second ferromagnetic material and a soft magnetic material surrounding at least a portion of the annular STT stack.</p>
申请公布号
WO2012158347(A2)
申请公布日期
2012.11.22
申请号
WO2012US36083
申请日期
2012.05.02
申请人
MICRON TECHNOLOGY, INC.;LIU, JUN;SANDHU, GURTEJ S.