| 摘要 |
PURPOSE: A memory circuit and an electronic device are provided to reduce the power consumption of the memory circuit by decreasing the number of transistors used in the memory circuit. CONSTITUTION: A memory circuit includes a first memory circuit(102), a second memory circuit(104), a first switch, a second switch(110), and a phase inversion circuit(106). The first memory circuit includes a first transistor, a second transistor, a third transistor, and a capacitive element. The first transistor includes an oxide semiconductor layer. One of the source and drain of the first transistor is connected to the first signal line and the other thereof is connected to a gate of the second transistor and one electrode of the capacitive device.
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