| 摘要 |
PURPOSE: A non-volatile memory device and a forming method thereof are provided to prevent electrons from being stored on a charge storage pattern at an edge portion of an active region. CONSTITUTION: An element isolation pattern(101a) defines an active region(103a) on a substrate(100). A gate pattern(150) extended in a second direction is formed on the substrate. A charge storage pattern(130) is formed between the active region and the gate pattern. A blocking dielectric layer(140) is formed between the charge storage pattern and the gate pattern. A tunnel dielectric layer(120) is formed between the active region and a charge pattern.
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