| 摘要 |
PURPOSE: A pattern formation method of a semiconductor device is provided to improve contrast and NILS(Normalized Image Log Slope) characteristics by forming a minute contact hole pattern using a negative development process. CONSTITUTION: A photosensitive film is formed on the upper side of a semiconductor substrate. An exposure process is progressed using a dark filed exposing mask(70) which includes a light-shield pattern(72) of a grid shape. A portion in which line patterns are crossed of the dark filed exposing mask is a hole pattern scheduled area. An X-axis pitch(P1) and a Y-axis pitch(P2) are formed into different shape in the hole pattern scheduled area. A photosensitive pattern(79) which defines a hole is formed with a negative development process.
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