| 发明名称 |
In-Ga-O OXIDE SINTERED BODY, TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND MANUFACTURING METHODS THEREFOR |
| 摘要 |
An oxide sintered body including indium oxide of which the crystal structure substantially includes a bixbyite structure, wherein gallium atoms are solid-soluted in the indium oxide, and an atomic ratio Ga/(Ga + In) is 0.10 to 0.15. |
| 申请公布号 |
EP2524905(A1) |
申请公布日期 |
2012.11.21 |
| 申请号 |
EP20110732812 |
申请日期 |
2011.01.14 |
| 申请人 |
IDEMITSU KOSAN CO., LTD. |
发明人 |
EBATA, KAZUAKI;TOMAI, SHIGEKAZU;YANO, KOKI |
| 分类号 |
C04B35/00;C23C14/08;C23C14/34;H01L21/203 |
主分类号 |
C04B35/00 |
| 代理机构 |
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