| 摘要 |
<p>Method for operating a memory (flash, phase change, magnetic RAM memory) storing data in units (blocks). For each unit of a set a wear level is determined. A maximum wear level amongst the wear levels is determined, step 62. A suggestion of a subset of units for being selected for data erasure is received and at least one unit in the subset is identified for data erasure (step 62), a wear level of which unit is less than maximum wear level, as determined in step 55. The wear level is based on count of erasures. A unit comprises a set of subunits (pages) and units are suggested for data erasure subject to a number of subunits containing valid data. If wear level of each unit equals maximum wear level, a unit is identified for erasure in view of a characteristic other than wear level as in steps 57-58. The approach of the invention can be combined with garbage collection schemes, provides minimized wear imbalance and essentially same degree of usage of all blocks (steps 54-56), prolongs lifetime of the memory (endurance), and can be applied to log-structured file systems. Also claimed is a storage device comprising a controller.</p> |
