发明名称 SYSTEM FOR MONITORING PLASMA
摘要 PURPOSE: A plasma monitoring system is provided to rapidly detect arc generated within a chamber and an end point of an etching process by using a spectroscope, an arc detection sensor, and a detection and control sensor. CONSTITUTION: A viewport(120) is directly combined with a chamber(100). A hole or a groove is formed on a part of the viewport. A visible light converting part converts ultraviolet rays or infrared rays of arc light generated in the chamber into visible rays. An arc detection sensor(110) senses the visible rays transferred through optical fiber(124). A spectroscope(108) is used for checking the state of plasma. A detection and control module module(112) detects an end point by analyzing data provided from the spectroscope. [Reference numerals] (108) Spectroscope; (110) Arc detection sensor; (112) Detection and control module module
申请公布号 KR20120126418(A) 申请公布日期 2012.11.21
申请号 KR20110044181 申请日期 2011.05.11
申请人 发明人
分类号 H01L21/66;H01L21/3065 主分类号 H01L21/66
代理机构 代理人
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