发明名称
摘要 A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
申请公布号 JP5079041(B2) 申请公布日期 2012.11.21
申请号 JP20100061796 申请日期 2010.03.18
申请人 发明人
分类号 G09F9/30;H01L27/32;H01L51/50;H01L51/52;H05B33/04 主分类号 G09F9/30
代理机构 代理人
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