| 摘要 |
A semiconductor device includes a substrate, a first gate electrode, a second gate electrode, a first channel region positioned between the substrate and the first gate electrode, a second channel region positioned between the substrate and the second gate electrode, a gate insulation film positioned at least between the first channel region and the first gate electrode, and between the second channel region and the second gate electrode, a first conducting section, a second conducting section, and a third conducting section each positioned between the substrate and the gate insulation film, and an intermediate electrode electrically connected to the second gate electrode, and overlapping a part of the first gate electrode, wherein the first channel region is positioned between the first conducting section and the second conducting section, and the second channel region is positioned between the second conducting section and the third conducting section. |
