| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the induction of an electric short of a bit line contact plug and a gate due to a spacer by forming the bit line contact plug by burying a conductive layer within a second bit line contact hole. CONSTITUTION: A gate which includes a laminating structure of gate polysilicon(102) and a gate metal layer(104) is formed on a semiconductor substrate(100). An inter-layer insulating film(106) is formed is formed on the upper side of the gate polysilicon and the gate metal layer. A first bit line contact hole is formed by etching the inter-layer insulating film. A second bit line contact hole(108a) is formed by etching the gate polysilicon. An insulating layer(110) is formed on the surface of the second bit line contact hole.</p> |
