| 摘要 |
<p>PURPOSE: A wafer for thin film transition is provided to prevent an excitation phenomenon of a thin film by improving adhesive force of the thin film and to reduce the generation of cracks in the thin film process. CONSTITUTION: A plurality of alignment key domains(20) is indicated on a wafer. Etching parts are etched from the surface of the wafer as a predetermined depth. An exhaust pipe path(24) connects the etching parts of a plurality of alignment keys. The exhaust pipe path is connected to the edge of the wafer. The exhaust pipe path is formed on the exterior of the plurality of alignment keys. A positive type alignment key and a negative type alignment key are mixed in the plurality of alignment keys.</p> |
