| 摘要 |
<p>PURPOSE: A semiconductor memory device is provided to improve the accuracy of a sensing operation by compensating capacitance by a dummy cell adjacent to a memory cell. CONSTITUTION: A selection memory cell(MC1) is connected to a first bit line and a first word line. A dummy memory cell(MC2) is connected to a second bit line complementary to the first bit line and a second word line. A sense amplifier(SA) is connected to the first bit line and the second bit line and reads data written in the selection memory cell by simultaneously activating the first word line and the second word line.</p> |
