发明名称 |
Singulation method and resulting device of thick gallium and nitrogen containing substrates |
摘要 |
A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other. In a preferred embodiment, the substrate has not been subjected to a thinning or polishing process for reducing its thickness. |
申请公布号 |
US8313964(B2) |
申请公布日期 |
2012.11.20 |
申请号 |
US201113163498 |
申请日期 |
2011.06.17 |
申请人 |
SHARMA RAJAT;KATONA THOMAS M.;FELKER ANDREW;SORAA, INC. |
发明人 |
SHARMA RAJAT;KATONA THOMAS M.;FELKER ANDREW |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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