发明名称 Fabrication method for resin-encapsulated semiconductor device
摘要 A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly.
申请公布号 US8313983(B2) 申请公布日期 2012.11.20
申请号 US201113108430 申请日期 2011.05.16
申请人 HITACHI, LTD. 发明人 KAJIWARA RYOICHI;MOTOWAKI SHIGEHISA;ITOU KAZUTOSHI;HOZOJI HIROSHI
分类号 H01L21/44 主分类号 H01L21/44
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