发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
First semiconductor layers are in source/drain regions on the semiconductor substrate. A second semiconductor layer comprises first portions on the first semiconductor layers and a second portion in a linear form in a channel region between the source/drain regions. A gate electrode is around the second portion of the second semiconductor layer via an insulating film. A film thickness of the second portion of the second semiconductor layer is smaller than a film thickness of the first portion of the second semiconductor layer. |
申请公布号 |
US8314464(B2) |
申请公布日期 |
2012.11.20 |
申请号 |
US20100700502 |
申请日期 |
2010.02.04 |
申请人 |
IWAYAMA MASAYOSHI;ASAO YOSHIAKI;KAJIYAMA TAKESHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
IWAYAMA MASAYOSHI;ASAO YOSHIAKI;KAJIYAMA TAKESHI |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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