| 摘要 |
A non-volatile semiconductor memory is disclosed comprising a memory device including a memory array having a plurality of blocks, each block comprising a plurality of memory segments. A plurality of logical block address (LBA) ranges are defined each identifying a plurality of LBA addresses, wherein at least one block is assigned to each LBA range. A plurality of write commands are received from a host, wherein each write command identifies at least one LBA. Data is written for each write command to the memory device. During a garbage collection operation, a memory segment storing valid write data is identified to be relocated, and the valid write data is relocated to a memory segment in a block of the corresponding LBA range. |
