发明名称 |
ESC high voltage control and methods thereof |
摘要 |
A plasma processing system for processing a wafer is provided. The system includes an electrostatic chuck (ESC) positioned inside a plasma processing chamber and configured to support the wafer. The ESC includes a positive terminal for providing a first force to the wafer and a negative terminal for providing a second force to the wafer. The system also includes a first circuit arrangement configured to measure at least a first voltage for determining a value of a positive load current applied to the positive terminal. The system further includes a second circuit arrangement configured to measure at least a second voltage for determining a value of a negative load current applied to the negative terminal. The system yet also includes circuitry configured to adjust a bias voltage using the values of the positive load current and the negative load current for balancing the first force and the second force. |
申请公布号 |
US8315029(B2) |
申请公布日期 |
2012.11.20 |
申请号 |
US201113185339 |
申请日期 |
2011.07.18 |
申请人 |
JAFARIAN-TEHRANI SEYED JAFAR;LU RALPH JAN-PIN;LAM RESEARCH CORPORATION |
发明人 |
JAFARIAN-TEHRANI SEYED JAFAR;LU RALPH JAN-PIN |
分类号 |
H01L21/683;H01T23/00 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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