发明名称 Integrated circuit memory having assisted access and method therefor
摘要 A memory and method for access the memory are provided. A first test is used to test memory elements to determine a lowest power supply voltage at which all the memory elements will operate to determine a weak memory element. Redundancy is used to substitute a redundant memory element for the weak memory element. The weak memory element is designated as a test element. In response to receiving a request to change a power supply voltage provided to the memory elements, a second test is used to test the test element to determine if the test element will function correctly at a new power supply voltage. If the test element passes the second test, the memory elements are accessed at the new power supply voltage. If the test element fails the second test, the memory elements are accessed using an access assist operation.
申请公布号 US8315117(B2) 申请公布日期 2012.11.20
申请号 US20090414761 申请日期 2009.03.31
申请人 ZHANG SHAYAN;COOPER TROY L.;HIGMAN JACK M.;KENKARE PRASHANT U.;RUSSELL ANDREW C.;FREESCALE SEMICONDUCTOR, INC. 发明人 ZHANG SHAYAN;COOPER TROY L.;HIGMAN JACK M.;KENKARE PRASHANT U.;RUSSELL ANDREW C.
分类号 G11C29/00 主分类号 G11C29/00
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