Magnetic random access memory

摘要

An MRAM according to the present invention has a magnetoresistance element 1. The magnetoresistance element 1 has: a first magnetic layer 10 including a first region 11 whose magnetization direction is reversible; a second magnetic layer 30 whose magnetization direction is fixed parallel to a magnetization easy axis direction of the first region 11; and a non-magnetic layer 20 sandwiched between the first magnetic layer 10 and the second magnetic layer 30. A domain wall DW is formed at least one end of the first region 11 of the first magnetic layer 10. The second magnetic layer 30 is formed to overlap with the first region and the above-mentioned one end. At a time of data writing, a write current is applied between the first magnetic layer 10 and the second magnetic layer 30.