Method for manufacturing semiconductor device

摘要

An object is to provide a semiconductor device with excellent reproducibility which is manufactured at low cost. A manufacturing method of a semiconductor device includes steps of forming a first electrode over a substrate; forming an insulating layer over the substrate and the first electrode; pressing a mold against the insulating layer to form an opening in the insulating layer; separating the mold from the insulating layer in which the opening is formed; hardening the insulating layer in which the opening is formed to form a partition wall; forming a light-emitting layer over the first electrode and the partition wall; and forming a second electrode over the light-emitting layer. The insulating layer contains a thermosetting resin material or a light curable resin material. The partition wall has a cross-sectional taper angle of 20 to 50°, and edges of a top and bottom thereof are rounded.