Fully balanced dual-port memory cell

摘要

The present disclosure provides a dual port static random access memory (SRAM) cell. The dual-port SRAM cell includes four sets of cascaded n-type metal-oxide-semiconductor field-effect transistors (NMOSFETs), each set of cascaded NMOSFETs having a pull-down device and a pass-gate device; and a first and second pull-up devices (PU1 and PU2) configured with the four pull-down devices to form two cross-coupled inverters, wherein two of the pass-gate devices are configured to form a first port and another two of the pass-gate devices are configured to form a second port.