发明名称 |
Non-volatile memory and semiconductor device |
摘要 |
There is provided a non-volatile memory which enables high accuracy threshold control in a writing operation. In the present invention, a drain voltage and a drain current of a memory transistor are controlled to carry out a writing operation of a hot electron injection system, which is wherein a charge injection speed does not depend on a threshold voltage. FIGS. 1A and 1B are views of a circuit structure for controlling the writing. In FIGS. 1A and 1B, an output of an operational amplifier 103 is connected to a control gate of a memory transistor 101, a constant current source 102 is connected to a drain electrode, and a source electrode is grounded. The constant current source 102 and a voltage Vpgm are respectively connected to two input terminals of the operational amplifier 103. |
申请公布号 |
US8315101(B2) |
申请公布日期 |
2012.11.20 |
申请号 |
US201113288383 |
申请日期 |
2011.11.03 |
申请人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;KATO KIYOSHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;KATO KIYOSHI |
分类号 |
G11C16/02;G11C16/04;G11C11/56;G11C16/10;G11C16/16;G11C16/26;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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