发明名称 |
Apparatus for producing single crystal silicon |
摘要 |
An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an exothermic ring that has a quartz-coated member covering the conductive member; a support member that supports the exothermic ring and passes through a wall of the housing in a rotatable manner; an operating device that rotates the support member and reciprocates the exothermic ring between a heating position where the exothermic ring is positioned close to the induction heating coil and a stand-by position where the exothermic ring is receded from the heating position; a sealing member that is provided between the wall of the housing and the support member and maintains the hermitic therebetween; and a cooling flow path that is formed in the support member and flows a cooling medium. |
申请公布号 |
US8313577(B2) |
申请公布日期 |
2012.11.20 |
申请号 |
US20080343798 |
申请日期 |
2008.12.24 |
申请人 |
CHIKUSA NOBORU;KITAGAWA TERUHISA;ITO MASAKI;ITO TAKANORI;MITSUBISHI MATERIALS CORPORATION |
发明人 |
CHIKUSA NOBORU;KITAGAWA TERUHISA;ITO MASAKI;ITO TAKANORI |
分类号 |
C30B35/00;C30B11/00;C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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