发明名称 Apparatus for producing single crystal silicon
摘要 An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an exothermic ring that has a quartz-coated member covering the conductive member; a support member that supports the exothermic ring and passes through a wall of the housing in a rotatable manner; an operating device that rotates the support member and reciprocates the exothermic ring between a heating position where the exothermic ring is positioned close to the induction heating coil and a stand-by position where the exothermic ring is receded from the heating position; a sealing member that is provided between the wall of the housing and the support member and maintains the hermitic therebetween; and a cooling flow path that is formed in the support member and flows a cooling medium.
申请公布号 US8313577(B2) 申请公布日期 2012.11.20
申请号 US20080343798 申请日期 2008.12.24
申请人 CHIKUSA NOBORU;KITAGAWA TERUHISA;ITO MASAKI;ITO TAKANORI;MITSUBISHI MATERIALS CORPORATION 发明人 CHIKUSA NOBORU;KITAGAWA TERUHISA;ITO MASAKI;ITO TAKANORI
分类号 C30B35/00;C30B11/00;C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 主分类号 C30B35/00
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