| 摘要 |
An organic field-effect transistor includes: source and drain electrodes; a semiconductor layer made of an organic semiconductor material placed at least between said source and drain electrodes; a gate electrode suitable for creating an electric field that increases the density of mobile charge carriers in the semiconductor layer in order to create a conduction channel in this semiconductor layer between the source and drain electrodes when a voltage VG is applied to the gate electrode; and an electrical insulator layer interposed between the gate electrode and the semiconductor layer, characterized in that it further includes a piezoelectric layer placed close to the conduction channel, in the semiconductor layer between the source and drain electrodes or on the opposite side of the gate electrode with respect to the electrical insulator and semiconductor layers, alongside the source and drain electrodes, said piezoelectric layer being electrically isolated from said source and drain electrodes and from the semiconductor layer. |
