发明名称 |
Techniques for providing a direct injection semiconductor memory device |
摘要 |
Techniques for providing a direct injection semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a direct injection semiconductor memory device including a plurality of memory cells arranged in an array of rows and columns. At least one of the plurality of memory cells may include a first region coupled to a respective bit line of the array and a second region coupled to a respective source line of the array. At least one of the plurality of memory cells may also include a body region spaced apart from and capacitively coupled to a respective word line of the array, wherein the body region may be electrically floating and disposed between the first region and the second region. At least one of the plurality of memory cells may further include a third region coupled to a respective carrier injection line of the array and wherein the respective carrier injection line may be one of a plurality of carrier injection lines in the array that are coupled to each other. |
申请公布号 |
US8315099(B2) |
申请公布日期 |
2012.11.20 |
申请号 |
US20100844477 |
申请日期 |
2010.07.27 |
申请人 |
VAN BUSKIRK MICHAEL A.;HOLD BETINA;ELLIS WAYNE;MICRON TECHNOLOGY, INC. |
发明人 |
VAN BUSKIRK MICHAEL A.;HOLD BETINA;ELLIS WAYNE |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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