发明名称 Mixing frequency at multiple feeding points
摘要 Embodiments disclosed herein generally relate to obtaining a substantially uniform plasma distribution within a large area processing chamber. For large area processing chambers that utilize RF voltages, standing waves can lead to deposition and/or etching non-uniformities. By applying RF voltage in at least two separate locations at two separate, but close frequencies with or without phase modulation, the wave interference pattern moves across the electrode. By moving the standing wave across the electrode, the plasma generated in the chamber can, over time, be substantially uniform.
申请公布号 US8312839(B2) 申请公布日期 2012.11.20
申请号 US20100730886 申请日期 2010.03.24
申请人 BAEK JONGHOON;APPLIED MATERIALS, INC. 发明人 BAEK JONGHOON
分类号 C23C16/50 主分类号 C23C16/50
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