| 摘要 |
PURPOSE: A plasma apparatus is provided to uniformly etch a substrate by reducing variance of surface stress using a baffle plate. CONSTITUTION: An upper electrode is located at inner upper portion of a reaction chamber. A bottom electrode faces the upper electrode. A baffle plate surrounds the bottom electrode. A plurality of penetration holes(410) is included in the edge of the baffle plate includes. A boundary line of the penetration hole is connected to a boundary line of the baffle plate. A recess portion is formed in the edge of the baffle plate. A focus ring(380) is located between the bottom electrode and the baffle plate. The penetration hole is located 1. 3 times to 1.98 times of the diameter of the penetration hole far from an extension line of each side of the focus ring.
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