发明名称 Electron beam exposure system and method for manufacturing reticle using the same
摘要 PURPOSE: An electron-beam exposure device and a method for manufacturing a reticle using the same are provided to shorten manufacturing time by exposing non-important patterns with electronic beam of large size. CONSTITUTION: A photosensitive film is coated on a blank reticle. First shot patterns within an important pattern area are exposed using first electronic beam(S14). Second shot patterns within a non-important pattern area are exposed using second electronic beam(S18). The second electronic beam comprises a cross-sectional area larger than the first electronic beam. A first mask pattern and a second mask pattern are formed by developing the photosensitive film(S22). A reticle is completed by etching the blank reticle using the first mask pattern and the second mask pattern. [Reference numerals] (AA) Start; (BB) End; (S10) A blank reticle is loaded on a stage; (S12) The size of a first opening of a first aperture is controlled; (S14) First shot patterns within an important pattern region are exposed with a first electronic beam created by being passed the first opening; (S16) The size of the first opening of the first aperture is controlled to be increased; (S18) Second shot patterns within a non-important region are exposed with a second electronic beam created by being passed the first opening; (S20) The second shot patterns are repeatedly exposed; (S22) First and second mask patterns are formed by developing a photosensitive film; (S24) A reticle is formed by performing an etching process
申请公布号 KR20120125796(A) 申请公布日期 2012.11.19
申请号 KR20110043452 申请日期 2011.05.09
申请人 发明人
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
代理机构 代理人
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