| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to prevent leakage current of a cell by equally forming the depth of a gate formed on an element isolation film and the depth of a gate formed on an active area. CONSTITUTION: An element isolation film(205) is formed on a semiconductor substrate(200). A first recess is formed on an active area(210). A second recess is formed by etching the element isolation film. The depth of the second recess is same as the depth of the first recess. A third recess is formed by etching the second recess. The first recess, the second recess, and the third recess are filled with conductive material. A first mask pattern for defining a gate expected area is formed on the upper side of the semiconductor substrate. The active area is etched using the first mask pattern as an etching mask.</p> |
