| 摘要 |
A semiconductor cell includes first trenches defining fin type active regions within the semiconductor substrate and adjacent to each other, second trenches disposed at one side and the other side of the first trenches, adjacent to the first trench and including fin type active regions, a first oxide layer formed on each of surfaces of the first trenches, and a second oxide layer formed on each of surfaces of the second trenches and having a thicker thickness than the first oxide layer. Although the critical dimension of the fin is increased, the gate drivability can be improved.
|
