发明名称 SEMICONDUCTOR DEVICE
摘要 Provided is a semiconductor device which can operate stably even in the case where a transistor thereof is a depletion transistor. The semiconductor device includes a first transistor for supplying a first potential to a first wiring, a second transistor for supplying a second potential to the first wiring, a third transistor for supplying a third potential at which the first transistor is turned on to a gate of the first transistor and stopping supplying the third potential, a fourth transistor for supplying the second potential to the gate of the first transistor, and a first circuit for generating a second signal obtained by offsetting a first signal. The second signal is input to a gate of the fourth transistor. The potential of a low level of the second signal is lower than the second potential.
申请公布号 US2012286855(A1) 申请公布日期 2012.11.15
申请号 US201213468135 申请日期 2012.05.10
申请人 UMEZAKI ATSUSHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 UMEZAKI ATSUSHI
分类号 G05F1/10 主分类号 G05F1/10
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