发明名称 |
PRESERVING STRESS BENEFITS OF UV CURING IN REPLACEMENT GATE TRANSISTOR FABRICATION |
摘要 |
A method of forming a semiconductor structure includes forming a stress inducing layer over one or more partially completed field effect transistor (FET) devices disposed over a substrate, the one or more partially completed FET devices including sacrificial dummy gate structures; planarizing the stress inducing layer and removing the sacrificial dummy gate structures; and following the planarizing the stress inducing layer and removing the sacrificial dummy gate structures, performing an ultraviolet (UV) cure of the stress inducing layer so as to enhance a value of an initial applied stress by the stress inducing layer on channel regions of the one or more partially completed FET devices.
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申请公布号 |
US2012286375(A1) |
申请公布日期 |
2012.11.15 |
申请号 |
US201113103149 |
申请日期 |
2011.05.09 |
申请人 |
CAI MING;GUO DECHAO;KULKARNI PRANITA;YEH CHUN-CHEN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CAI MING;GUO DECHAO;KULKARNI PRANITA;YEH CHUN-CHEN |
分类号 |
H01L29/772;H01L21/28 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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