发明名称 SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a sputtering target which is an Al-based target and is free from cracking when it is formed even if it has a high content of Cr exhibiting more excellent corrosion resistance and further which is also free from cracking during sputtering, and to provide a method for producing the sputtering target. <P>SOLUTION: In the sputtering target, Al-enriched particles having an absolute maximum length within the range of 0.1-50 &mu;m are dispersed in a base material having a composition containing, by atomic percentage, 5-20% of Si and 5.5-25% of Cr, with the remainder composed of Al and inevitable impurities. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012224890(A) 申请公布日期 2012.11.15
申请号 JP20110091725 申请日期 2011.04.18
申请人 MITSUBISHI MATERIALS CORP 发明人 NONAKA SOHEI;CHO SHUHIN;MATSUZAKI HIDEJI
分类号 C23C14/34;B22F3/14;B22F9/08;C22C21/00 主分类号 C23C14/34
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