FIELD-EFFECT TRANSISTOR, MANUFACTURING SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To enable further microfabrication of a field-effect transistor in a state that problems such as reduction in a current amount and the breaking of a wire are suppressed.

SOLUTION: A field-effect transistor has: a fin-like channel region 102 comprising a graphene formed on a substrate 101; a gate electrode 104; and a source electrode 105 and drain electrode 106 connected to the channel region 102 so as to be provided on both sides of the gate electrode 104. For example, the channel region 102 is obtained by laminating one to four layers or so of the graphene. In an example indicated in Fig. 1, the gate electrode 104 is formed to the channel region 102 via a gate insulating layer 103.

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