发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To obtain a substrate processing apparatus which reduces a burden for introducing new equipment to an existing substrate processing apparatus and removes a thick deposition film adhered to an inner wall of the substrate processing apparatus. <P>SOLUTION: A substrate processing apparatus 1 includes: a chamber 11; a stage 12 holding a substrate in the chamber 11; a cleaning gas supply system 60 supplying a cleaning gas, removing a deposit adhered to the interior of the chamber 11 through a process performed to the substrate, to the chamber 11; and an exhaust system 30 exhausting the gas in the chamber 11 from a gas exhaust port 15 provided at a bottom wall of the chamber 11. In the substrate processing apparatus 1, a groove 16 is provided around the gas exhaust port 15 in the chamber 11. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012227209(A) 申请公布日期 2012.11.15
申请号 JP20110090997 申请日期 2011.04.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAKANISHI TAIKI;IMAMURA KEN;IKEDA TOMOHIRO
分类号 H01L21/205;C23C16/44;H01L21/31 主分类号 H01L21/205
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