发明名称 SEMICONDUCTOR COMPONENT WITH IMPROVED SOFTNESS
摘要 A semiconductor component includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type arranged distant to the first emitter region in a vertical direction of the semiconductor body, a base region of one of the first and second conductivity types arranged between the first and second emitter regions and having a lower doping concentration than the first second emitter regions, a first field stop zone of the same conductivity type as the base region arranged in the base region, and a second field stop zone of the same conductivity type as the base region arranged in the base region. The second field stop zone is arranged distant to the first field stop in the vertical direction of the semiconductor, the first field stop zone is arranged between the second field stop zone and the second emitter zone, and the second field stop zone includes a plurality of field stop zone sections arranged mutually distant from each other in at least one horizontal direction of the semiconductor body.
申请公布号 US2012286323(A1) 申请公布日期 2012.11.15
申请号 US201113106065 申请日期 2011.05.12
申请人 WERBER DOROTHEA;INFINEON TECHNOLOGIES AUSTRIA AG 发明人 WERBER DOROTHEA
分类号 H01L29/739 主分类号 H01L29/739
代理机构 代理人
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