发明名称 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition that can give good CD (critical dimension) uniformity in the process of producing a resist pattern and can reduce the number of defects generating in the process of forming a resist pattern. <P>SOLUTION: The resist composition includes: (A1) a resin having a structural unit expressed by formula (I); (A2) a resin which is insoluble or poorly soluble with an alkali aqueous solution and can dissolve in an alkali aqueous solution by the action of an acid; and (B) an acid generator having a structure to be cleaved by the action of an alkali developing solution. In formula (I), R<SP POS="POST">1</SP>represents a hydrogen atom or a methyl group; A<SP POS="POST">1</SP>represents -(CH<SB POS="POST">2</SB>)<SB POS="POST">m1</SB>-, -(CH<SB POS="POST">2</SB>)<SB POS="POST">m2</SB>-O-(CH<SB POS="POST">2</SB>)<SB POS="POST">m3</SB>-, or -(CH<SB POS="POST">2</SB>)<SB POS="POST">m4</SB>-CO-O-(CH<SB POS="POST">2</SB>)<SB POS="POST">m5</SB>-, where m1 to m5 each independently represent an integer of 1 to 6; and R<SP POS="POST">2</SP>represents a hydrocarbon group having 1 to 10 carbon atoms and having a fluorine atom. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012226331(A) 申请公布日期 2012.11.15
申请号 JP20120074431 申请日期 2012.03.28
申请人 SUMITOMO CHEMICAL CO LTD 发明人 ICHIKAWA KOJI;MASUYAMA TATSURO;HIRAOKA TAKASHI
分类号 G03F7/004;C08F20/22;G03F7/039;H01L21/027 主分类号 G03F7/004
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