| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem with contamination of impurities contained in a color filter. <P>SOLUTION: A semiconductor device includes: a thin film transistor; a source electrode and a drain electrode electrically connected to the thin film transistor; a first insulation film on the thin film transistor, the source electrode, and the drain electrode; a color filter on the first insulation film; a second insulation film on the color filter; and a pixel electrode on the second insulation film. The first insulation film includes silicon nitride. The color filter has a first opening and the second insulation film has a second opening. The second opening is provided inside the first opening. The pixel electrode is electrically connected to one of the source electrode and the drain electrode via the first opening and the second opening. The color filter is not in contact with the pixel electrode, the source electrode, and the drain electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
