发明名称 PROGRAMMING MEMORY CELLS
摘要 Methods for programming, memory devices, and methods for reading are disclosed. One such method for programming a memory device (e.g., an SLC memory device) includes encoding a two level data stream to a three level stream prior to programming the memory.
申请公布号 US2012287718(A1) 申请公布日期 2012.11.15
申请号 US201113106118 申请日期 2011.05.12
申请人 MICRON TECHNOLOGY, INC. 发明人 VARANASI CHANDRA C.
分类号 G11C16/10 主分类号 G11C16/10
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