发明名称 |
LIQUID COMPOSITION, METHOD OF PRODUCING SILICON SUBSTRATE, AND METHOD OF PRODUCING LIQUID DISCHARGE HEAD SUBSTRATE |
摘要 |
A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water. |
申请公布号 |
US2012289055(A1) |
申请公布日期 |
2012.11.15 |
申请号 |
US201213556991 |
申请日期 |
2012.07.24 |
申请人 |
ABO HIROYUKI;YONEMOTO TAICHI;KOYAMA SHUJI;FURUSAWA KENTA;KISHIMOTO KEISUKE;CANON KABUSHIKI KAISHA |
发明人 |
ABO HIROYUKI;YONEMOTO TAICHI;KOYAMA SHUJI;FURUSAWA KENTA;KISHIMOTO KEISUKE |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|