发明名称 LIQUID COMPOSITION, METHOD OF PRODUCING SILICON SUBSTRATE, AND METHOD OF PRODUCING LIQUID DISCHARGE HEAD SUBSTRATE
摘要 A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.
申请公布号 US2012289055(A1) 申请公布日期 2012.11.15
申请号 US201213556991 申请日期 2012.07.24
申请人 ABO HIROYUKI;YONEMOTO TAICHI;KOYAMA SHUJI;FURUSAWA KENTA;KISHIMOTO KEISUKE;CANON KABUSHIKI KAISHA 发明人 ABO HIROYUKI;YONEMOTO TAICHI;KOYAMA SHUJI;FURUSAWA KENTA;KISHIMOTO KEISUKE
分类号 H01L21/306 主分类号 H01L21/306
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