发明名称 |
NANOWIRE PIN TUNNEL FIELD EFFECT DEVICES |
摘要 |
A nanowire tunnel device includes a nanowire suspended above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, an n-type doped region including a first portion of the nanowire adjacent to the channel portion, and a p-type doped region including a second portion of the nanowire adjacent to the channel portion. |
申请公布号 |
US2012286242(A1) |
申请公布日期 |
2012.11.15 |
申请号 |
US201213556300 |
申请日期 |
2012.07.24 |
申请人 |
BANGSARUNTIP SARUNYA;KOESTER STEPHEN J.;MAJUMDAR AMLAN;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BANGSARUNTIP SARUNYA;KOESTER STEPHEN J.;MAJUMDAR AMLAN;SLEIGHT JEFFREY W. |
分类号 |
H01L29/775;B82Y99/00 |
主分类号 |
H01L29/775 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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