发明名称 IN2O3-ZNO SPUTTERING TARGET
摘要 <p>A sputtering target that comprises an oxide containing indium, zinc, and at least one element (X) selected from group X, with the atomic ratios between said elements satisfying relations (1) and (2). Group X: magnesium, silicon, aluminum, scandium, titanium, yttrium, zirconium, hafnium, tantalum, lanthanum, neodymium, and samarium (1) 0.30 = In/(In+Zn) = 0.90 (2) 0.70 = In/(In+X) = 0.99 (In these relations, In, Zn, and X represent the atomic ratios of indium, zinc, and element X in the sputtering target, respectively.)</p>
申请公布号 WO2012153522(A1) 申请公布日期 2012.11.15
申请号 WO2012JP03007 申请日期 2012.05.08
申请人 IDEMITSU KOSAN CO.,LTD.;ITOSE, MASAYUKI;NISHIMURA, MAMI;SUNAGAWA, MISA;KASAMI, MASASHI;YANO, KOKI 发明人 ITOSE, MASAYUKI;NISHIMURA, MAMI;SUNAGAWA, MISA;KASAMI, MASASHI;YANO, KOKI
分类号 C23C14/34;C04B35/00;C04B35/622;H01L21/203;H01L21/285;H01L21/336;H01L21/363;H01L29/786 主分类号 C23C14/34
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