| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor with excellent electric characteristics including an oxide semiconductor, and a manufacturing method for the same. <P>SOLUTION: A transistor includes an oxide semiconductor film formed on a base insulation film, a gate electrode overlapping with the oxide semiconductor film via a gate insulation film, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulation film includes a first oxide insulation film a part of which is in contact with the oxide semiconductor film, and a second oxide insulation film provided around the first oxide insulation film. An end of the oxide semiconductor film intersecting with the channel width direction of the transistor is located on the second oxide insulation film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
