SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with reduced leakage current against reverse bias while maintaining excellent on-characteristics.

SOLUTION: A semiconductor device comprises: a channel formation layer composed of a nitride-based compound semiconductor; a pseudo mixed crystal layer provided on the channel formation layer and composed of a pseudo mixed crystal including a first semiconductor layer composed of a first nitride-based compound semiconductor and a second semiconductor layer composed of a second nitride-based compound semiconductor; a conductive semiconductor layer provided on the pseudo mixed crystal layer, composed of the nitride-based compound semiconductor, and having a conductivity type reverse to the conductivity type of majority carriers of the channel formation layer; a first electrode contacting the conductive semiconductor layer; and a second electrode electrically connected to the channel formation layer.

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